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Jon Ihlefeld Phones & Addresses

  • Charlottesville, VA
  • 7020 Eagle Mesa Rd NE, Albuquerque, NM 87113 (505) 503-1553
  • State College, PA
  • 225 Hyland Ave, Ames, IA 50014 (515) 268-9778
  • 1017 Avent Hl, Raleigh, NC 27606 (919) 851-7683
  • 2807 Conifer Dr, Raleigh, NC 27606 (919) 832-5228
  • Muscatine, IA

Work

Position: Building and Grounds Cleaning and Maintenance Occupations

Education

Degree: High school graduate or higher

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Jon Ihlefeld Photo 1

Jon Ihlefeld

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Location:
Albuquerque, New Mexico Area
Industry:
Research

Publications

Us Patents

Articles Comprising Manganese Doped Barium Titanate Thin Film Compositions

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US Patent:
7572518, Aug 11, 2009
Filed:
Oct 24, 2007
Appl. No.:
11/923594
Inventors:
William Borland - Chapel Hill NC,
Ian Burn - Hockessin DE,
Jon Fredrick Ihlefeld - State College PA,
Jon Paul Maria - Raleigh NC,
Seigi Suh - Cary NC,
Assignee:
E. I. du Pont de Nemours and Company - Wilmington DE
North Carolina State University - Raleigh NC
International Classification:
B32B 9/00
US Classification:
428469, 428472, 428702
Abstract:
The present invention is directed to an article comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0. 002 and 0. 05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.

Methods Of Making Thin Film Capacitors Comprising A Manganese Doped Barium Titantate Dielectric

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US Patent:
7601181, Oct 13, 2009
Filed:
Oct 25, 2007
Appl. No.:
11/923974
Inventors:
William Borland - Chapel Hill NC,
Ian Burn - Hockessin DE,
Jon Fredrick Ihlefeld - State College PA,
Jon Paul Maria - Raleigh NC,
Seigi Suh - Cary NC,
Assignee:
E.I. du Pont de Nemours and Company - Wilmington DE
North Carolina State University - Raleigh NC
International Classification:
H01L 21/8242
H01G 9/00
US Classification:
29 2503, 438250, 438253, 361313
Abstract:
Described herein are methods for making articles comprising a dielectric layer formed from any solution composition that can form barium titanate during firing and containing manganese in an amount between 0. 002 and 0. 05 atom percent of the solution composition, wherein the dielectric layer has been formed on metal foil and fired in a reducing atmosphere.

Glass Flux Assisted Sintering Of Chemical Solution Deposited Thin Dielectric Films

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US Patent:
8183108, May 22, 2012
Filed:
Jun 15, 2006
Appl. No.:
12/301791
Inventors:
William J. Borland - Cary NC,
Seigi Suh - Cary NC,
Jon-Paul Maria - Raleigh NC,
Jon Fredrick Ihlefeld - Raleigh NC,
Ian Burn - Hockessin DE,
Assignee:
CDA Processing Limited Liability Company - Wilmington DE
International Classification:
H01L 21/20
H01B 3/20
H01B 3/00
US Classification:
438240, 252572, 174137 B
Abstract:
A method of making dense dielectrics layers via chemical solution deposition by adding inorganic glass fluxed material to high dielectric constant compositions, depositing the resultant mixture onto a substrate and annealing the substrate at temperatures between the softening point of the inorganic glass flux and the melting point of the substrate. A method of making a capacitor comprising a dense dielectric layer.

Thin Film Dielectrics For Capacitors And Methods Of Making Thereof

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US Patent:
2005001, Jan 20, 2005
Filed:
Jul 17, 2003
Appl. No.:
10/621796
Inventors:
William Borland - Cary NC,
Jon Ihlefeld - Raleigh NC,
Angus Kingon - Cary NC,
Jon-Paul Maria - Raleigh NC,
International Classification:
H01B013/00
US Classification:
216013000
Abstract:
Dielectrics are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. The dielectrics are annealed at temperatures allowing the use of copper foil substrates, and at low oxygen partial pressures.

Manganese Doped Barium Titanate Thin Film Compositions, Capacitors, And Methods Of Making Thereof

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US Patent:
2006028, Dec 21, 2006
Filed:
Jun 21, 2005
Appl. No.:
11/157621
Inventors:
William Borland - Cary NC,
Ian Burn - Hockessin NC,
Jon Ihlefeld - Raleigh NC,
Jon-Paul Maria - Raleigh NC,
Seigi Suh - Cary NC,
International Classification:
C04B 35/00
US Classification:
501137000, 106287190
Abstract:
The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped with 0.002 to 0.05 atom percent of a manganese-containing additive.

Barium Titanate Thin Films With Titanium Partially Substituted By Zirconium, Tin Or Hafnium

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US Patent:
2007013, Jun 14, 2007
Filed:
Oct 2, 2006
Appl. No.:
11/537957
Inventors:
William Borland - Cary NC,
Jon Ihlefeld - Raleigh NC,
Jon-Paul Maria - Raleigh NC,
International Classification:
C23C 16/40
B05D 5/12
US Classification:
106287190, 427079000
Abstract:
Disclosed are high permittivity (dielectric constant), thin film CSD barium titanate based dielectric compositions that have titanium partially substituted by zirconium, tin or hafnium. The compositions show capacitance as a function of temperature that better satisfies the X7R requirements.

Thin Film Dielectrics With Co-Fired Electrodes For Capacitors And Methods Of Making Thereof

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US Patent:
2008001, Jan 17, 2008
Filed:
Jul 14, 2006
Appl. No.:
11/486837
Inventors:
William J. Borland - Cary NC,
Patrick Daniels - Cary NC,
Dean W. Face - Wilmington DE,
Jon Fredrick Ihlefeld - Raleigh NC,
Jon-Paul Maria - Raleigh NC,
International Classification:
H01G 7/00
H01G 4/06
H01L 21/20
H05K 3/10
US Classification:
29 2542, 29846, 361311, 438381
Abstract:
Methods of making capacitors are disclosed that comprise forming a dielectric layer over a substrate with a first electrode or a bare metallic foil, depositing a top conductive layer over the dielectric layer, and annealing the dielectric layer and the top conductive layer wherein the foil or first electrode, the dielectric, and the conductive layer form a capacitor.

Solution Deposition Planarization Method

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US Patent:
2012004, Feb 16, 2012
Filed:
Jun 24, 2011
Appl. No.:
13/168093
Inventors:
Vladimir Matias - Santa Fe NM,
Christopher J. Sheehan - Santa Fe NM,
Jon Fredrick Ihlefeld - Albuquerque NM,
Paul Gilbert Clem - Albuquerque NM,
Assignee:
Los Alamos National Security, LLC - Los Alamos NM
International Classification:
B05D 1/38
B05D 3/02
US Classification:
4273722
Abstract:
A process for planarizing a substrate involves applying a coating of a first solution of yttrium oxide precursor to a rough substrate surface and heating to remove solvent and convert the yttrium oxide precursor to yttrium oxide. This is repeated with the first solution and then with the second solution. A final surface roughness less than 1 nm RMS may be obtained. In addition, a process for preparing a layered structure includes solution deposition planarization of a rough substrate using different concentrations of metal oxide precursor to provide a metal oxide surface having a surface roughness, and then depositing MgO by IBAD (ion beam assisted deposition). A benefit of a better in plane MgO texture was observed for lower molarities, and when two solutions of different concentrations was employed for coating the rough substrate prior to IBAD-MgO.
Jon F Ihlefeld from Charlottesville, VA, age ~41 Get Report