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Jijun Sun

from Chandler, AZ
Age ~53

Jijun Sun Phones & Addresses

  • 933 Aquarius Ct, Chandler, AZ 85249 (480) 802-4263
  • Maricopa, AZ
  • 2190 E Lynx Pl, Chandler, AZ 85249 (480) 802-4263

Work

Position: Professional/Technical

Education

Degree: High school graduate or higher

Business Records

Name / Title
Company / Classification
Phones & Addresses
Jijun Sun
Director
CONTEMPORARY CHINESE SCHOOL OF ARIZONA
510 E University Dr #3415, Tempe, AZ 85281
Director 510 E University Dr #3415, Tempe, AZ 85281

Publications

Us Patents

Oblique Deposition To Induce Magnetic Anisotropy For Mram Cells

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US Patent:
6818961, Nov 16, 2004
Filed:
Jun 30, 2003
Appl. No.:
10/611789
Inventors:
Nicholas D. Rizzo - Gilbert AZ
Bradley N. Engel - Chandler AZ
Jason A. Janesky - Mesa AZ
Jon M. Slaughter - Tempe AZ
Jijun Sun - Chandler AZ
Assignee:
Freescale Semiconductor, Inc. - Austin TX
International Classification:
H01L 2982
US Classification:
257422, 257421, 365157, 365158, 365171, 365173, 438 3
Abstract:
A method of fabricating a magnetoresistive tunneling junction cell comprising the steps of providing a substrate with a surface, depositing a first magnetic region ( ) having a resultant magnetic moment vector onto the substrate, depositing an electrically insulating material ( ) onto the first magnetic region, and depositing a second magnetic region ( ) onto the electrically insulating material, wherein at least a portion of one of the first and second magnetic regions is formed by depositing said region at a nonzero deposition angle relative to a direction perpendicular to the surface of the substrate to create an induced anisotropy.

Two-Axis Magnetic Field Sensor Having Reduced Compensation Angle For Zero Offset

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US Patent:
8508221, Aug 13, 2013
Filed:
Aug 30, 2010
Appl. No.:
12/870970
Inventors:
Jijun Sun - Chandler AZ,
Phillip Mather - Maricopa AZ,
Srinivas Pietambaram - Gilbert AZ,
Jon Slaughter - Tempe AZ,
Renu Whig - Chandler AZ,
Nicholas Rizzo - Gilbert AZ,
Assignee:
Everspin Technologies, Inc. - Chandler AZ
International Classification:
G01R 33/02
H01R 43/00
US Classification:
324249, 324252
Abstract:
A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer.

Structure And Method For Fabricating A Magnetic Thin Film Memory Having A High Field Anisotropy

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US Patent:
2012001, Jan 19, 2012
Filed:
Jul 15, 2010
Appl. No.:
12/837307
Inventors:
Jijun SUN - Chandler AZ,
Jon SLAUGHTER - Tempe AZ,
Nicholas RIZZO - Gilbert AZ,
Assignee:
EVERSPIN TECHNOLOGIES, INC. - Chandler AZ
International Classification:
B05D 5/00
US Classification:
427129, 427131
Abstract:
A method for depositing uniform and smooth ferromagnetic thin films with high deposition-induced microstructural anisotropy includes a magnetic material deposited in two or more static oblique deposition steps from opposed directions to form a free layer having a high kink Hk, a high energy barrier to thermal reversal, a low critical current in spin-torque switching embodiments, and improved resistance to diffusion of material from adjacent layers in the device. Nonmagnetic layers deposited by the static oblique deposition technique may be used as seed layers for a ferromagnetic free layer or to generate other types of anisotropy determined by the deposition-induced microstructural anisotropy. Additional magnetic or non-magnetic layers may be deposited by conventional methods adjacent to oblique layer to provide magnetic coupling control, reduction of surface roughness, and barriers to diffusion from additional adjacent layers in the device.

Methods And Structures For Exchange-Coupled Magnetic Multi-Layer Structure With Improved Operating Temperature Behavior

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US Patent:
2009012, May 14, 2009
Filed:
Nov 13, 2007
Appl. No.:
11/938816
Inventors:
Srinivas V. Pietambaram - Chandler AZ,
Jason A. Janesky - Gilbert AZ,
Jon M. Slaughter - Tempe AZ,
Jijun Sun - Chandler AZ,
Assignee:
FREESCALE SEMICONDUCTOR, INC. - Austin TX
International Classification:
H01L 27/108
H01L 21/02
US Classification:
257295, 438 3, 257E43001, 257E43006
Abstract:
Exchange-coupled magnetic multilayer structures for use with toggle MRAM devices and the like include a tunnel barrier layer () and a synthetic antiferromagnet (SAF) structure () formed on the tunnel barrier layer (), wherein the SAF () includes a plurality (e.g., four or more) of ferromagnetic layers () antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers (). The microcrystalline texture of one or more of the ferromagnetic layers is reduced to substantially zero as measured from X-Ray Diffraction by exposure of various layers to oxygen, by forming a detexturing layer, by adding oxygen during the ferromagnetic or coupling layer fabrication, and/or by using amorphous materials.

Methods And Structures For An Integrated Two-Axis Magnetic Field Sensor

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US Patent:
2009005, Mar 5, 2009
Filed:
Aug 30, 2007
Appl. No.:
11/848053
Inventors:
Phillip Glenn Mather - Maricopa AZ,
Jijun Sun - Chandler AZ,
Young Sir Chung - Chandler AZ,
Assignee:
FREESCALE SEMICONDUCTOR, INC. - Austin TX
International Classification:
G11B 5/33
US Classification:
36032411
Abstract:
A two-axis, single-chip external magnetic field sensor incorporates tunneling magneto-resistance (TMR) technology. In one embodiment, an integrated device includes at least two sensor elements having pinned layers with orientation situated at a known angle (e.g., 90 degrees) with respect to each other. In the presence of a magnetic field, the information from the multiple sensor elements can be processed (e.g., using a conventional bridge configuration) to determine the orientation of the integrated sensor with respect to the external field. In order to achieve an integrated sensor with multiple pinned layer orientations, a novel processing method utilizes antiferromagnetic pinning layers different materials with different blocking temperatures (e.g., PtMn and IrMn).

Methods And Apparatus For A Synthetic Anti-Ferromagnet Structure With Improved Thermal Stability

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US Patent:
2009004, Feb 19, 2009
Filed:
Aug 15, 2007
Appl. No.:
11/839044
Inventors:
Jijun Sun - Chandler AZ,
Renu W. Dave - Chandler AZ,
Jon M. Slaughter - Tempe AZ,
Assignee:
FREESCALE SEMICONDUCTOR, INC. - Austin AZ
International Classification:
H01F 10/00
US Classification:
36032411
Abstract:
A synthetic antiferromagnet (SAF) structure includes a bottom ferromagnetic layer, a coupling layer formed over the bottom ferromagnetic layer, and a top ferromagnetic layer formed over the coupling layer. One of the top and bottom ferromagnetic layers comprises an amorphous alloy characterized by (CoFe)B, where a is less than approximately 10 atomic percent, and z is greater than approximately 20 atomic percent. In general, a magnetic device includes at least one magnetic layer comprising an amorphous CoFeB alloy characterized by (CoFe)B, where a is less than approximately 10 atomic percent, and z is greater than approximately 20 atomic percent.

Mram Free Layer Synthetic Antiferromagnet Structure And Methods

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US Patent:
2008020, Aug 28, 2008
Filed:
Feb 28, 2007
Appl. No.:
11/679982
Inventors:
Jijun Sun - Chandler AZ,
Nicholas D. Rizzo - Gilbert AZ,
Jon M. Slaughter - Tempe AZ,
Assignee:
FREESCALE SEMICONDUCTOR, INC. - Austin TX
International Classification:
G11C 11/15
H01L 21/00
H01L 29/82
US Classification:
365173, 257421, 438 3, 257E29323, 257E21001
Abstract:
A magnetic tunnel junction (MTJ) structure for use with toggle MRAM devices and the like includes a tunnel barrier layer and a synthetic antiferromagnet (SAF) structure formed on the tunnel barrier layer, wherein the SAF includes a plurality (e.g., three or more) ferromagnetic layers antiferromagnetically or ferromagnetically coupled by a plurality of respective coupling layers. The bottom ferromagnetic layer adjacent the tunnel barrier layer has a high spin polarization and a high intrinsic anisotropy field (H) while one or more of the remaining ferromagnetic layers has a low intrinsic anisotropy field H.

Nanocrystalline Layers For Improved Mram Tunnel Junctions

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US Patent:
2004004, Mar 4, 2004
Filed:
Aug 30, 2002
Appl. No.:
10/232111
Inventors:
Jon Slaughter - Tempe AZ,
Renu Dave - Chandler AZ,
Jijun Sun - Chandler AZ,
International Classification:
G11B005/39
US Classification:
360/324200, 360/324110, 029/603140
Abstract:
An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element with a crystallographically disordered seed layer and/or template layer seeding the nanocrystalline growth of subsequent layers, including a pinning layer, a pinned layer, and fixed layer.
Jijun Sun from Chandler, AZ, age ~53 Get Report